ULTRARAM

New and articles of Ultralow-power, Non-volatile, Random Access Memory Arrays for Datacentres and Space Applications

News

In the media

‘Holy grail for memory tech’: New candidate for universal memory emerges in race to replace RAM and NAND
19 February 2024 | phase2, ULTRARAM

‘Holy grail for memory tech’: New candidate for universal memory emerges in race to replace RAM and NAND

The current memory market, worth $165bn a year, is dominated by DRAM and NAND flash. ULTRARAM, developed by Quinas Technology, a spinoff from Lancaster University in the UK, combines the advantages of both, offering fast, non-volatile memory with high endurance and ultra-low switching energies.

Elektra Awards 2023: ULTRARAM project wins Readers’ Choice award
4 December 2023 | phase2, ULTRARAM

Elektra Awards 2023: ULTRARAM project wins Readers’ Choice award

The article about Lancaster’s research investigated the commercialisation of ULTRARAM™ which is a novel type of universal computer memory invented by Manus Hayne, won the award ‘University Research Group of the Year’ at the Elektra Awards.

ULTRARAM universal computer memory to be commercialised
12 April 2023 | ULTRARAM

ULTRARAM universal computer memory to be commercialised

Lancaster University is to create a spinout company to commercialise the universal computer memory technology ULTRARAM developed at the university.

UltraRAM: el sustituto de la RAM y el SSD (in Spanish)
11 April 2023 | ULTRARAM

UltraRAM: el sustituto de la RAM y el SSD (in Spanish)

UltraRAM es un tipo de memoria prometedora con posibilidad de aunar en un mismo dispositivo tanto la memoria de acceso aleatorio por su velocidad, y la memoria de almacenamiento secundario por su capacidad de no ser volátil.

Lancaster University invents universal memory technology
5 April 2023 | ULTRARAM

Lancaster University invents universal memory technology

ULTRARAM is to be commercialised following the successful completion of the ICURe Explore award as part of the prestigious Innovate UK ICURe Programme designed to help researchers explore the commercial application and potential of UK research.

Breakthrough ULTRARAM paper selected as best of 2022 by journal
19 December 2022 | ULTRARAM

Breakthrough ULTRARAM paper selected as best of 2022 by journal

A scientific paper on a pioneering type of patented computer memory known as ULTRARAM™ has been selected as the best of 2022 for the journal Advanced Electronic Materials.

UltraRAM as a high-endurance, low-power, silicon-hybrid storage solution (in Spanish)
15 January 2022 | ULTRARAM

UltraRAM as a high-endurance, low-power, silicon-hybrid storage solution (in Spanish)

Investigadores del Departamento de Física e Ingeniería de la Universidad de Lancaster han compartido sus avances en el desarrollo de componentes electrónicos, con una solución que aunaría la RAM y la memoria de almacenamiento en lo que han llamado UltraRAM.

ULTRARAM: the future of hybrid storage of the type RAM + SSD (in Spansih)
13 January 2022 | ULTRARAM

ULTRARAM: the future of hybrid storage of the type RAM + SSD (in Spansih)

Es importante destacar que la UltraRAM podría ser el tipo de memoria universal que algún día satisfaga todas las necesidades de memoria, tanto de RAM como de almacenamiento, de los PC y dispositivos tecnológicos de cualquier tipo.

UltraRAM will merge RAM and storage into a single component (in Spanish)
12 January 2022 | ULTRARAM

UltraRAM will merge RAM and storage into a single component (in Spanish)

Investigadores británicos han anunciado avances en una nueva tecnología de memorias conocida como UltraRAM, que fusionaría en un solo componente la memoria RAM y el almacenamiento interno de un equipo informático.

UltraRAM, the universal memory that could put an end to RAM and hard drives (in Spanish)
11 January 2022 | ULTRARAM

UltraRAM, the universal memory that could put an end to RAM and hard drives (in Spanish)

En términos de rendimiento, los primeros signos son bastante prometedores en el caso de la UltraRAM. El informe afirma que esta tecnología de memoria es capaz de ofrecer tiempos de almacenamiento de datos de, por lo menos, 1.000 años y una de energía de conmutación inferior que DRAM y flash.